3 results
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 30 August 2012, pp. 94-103
- Print publication:
- 14 January 2013
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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B10-02
- Print publication:
- 2006
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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B02-01
- Print publication:
- 2006
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