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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

Abstract

The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

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[1] Karoda, N., Shibahara, K., Yoo, W.S., Nishino, S., Mastunami, H., Extended Abstract, 19th Conference on Solid State Devices and Materials, Tokio, 1987, 227.
[2] Crippa, D., Valente, G.L., Ruggiero, A., Neri, L., Reitano, R., Calcagno, L., Foti, G., Mauceri, M., Leone, S., Pistone, G., Abbondanza, G., Abbagnale, G., Veneroni, A., Omarini, F., Zamolo, L., Masi, M., Roccaforte, F., Giannazzo, F., Franco, S. Di and Via, F. La, Mat. Sci. Forum, 2005, 483–485, 67.
[3] Myers, R. L., Kordina, O., Rao, S., Everly, R., and Saddow, S. E., Materials Science Forum 2005, 483–485, 73.
[4] Via, F. La, Galvagno, G., Roccaforte, F., Ruggiero, A., Calcagno, L., Appl. Phys. Lett., 2005 87(14), 142105.

Keywords

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

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