8 results
InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1185
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- 1997
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Valence Band Physics in Wurtzite GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 445
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- 1997
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Properties of C and CN Films Prepared by Mass-Separated Hyper-Thermal Carbon and Nitrogen Ions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 504 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 307
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- 1997
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Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 73
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- 1996
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Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 605
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- 1996
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Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 61
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- 1995
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Suppression of Ion-Induced Charge Collection by High-Energy B+-Implanted Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 354 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 135
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- 1994
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Formation of Au Colloid Particles in Silica Glass by Ion Implantation.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 235 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 389
- Print publication:
- 1991
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