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Valence Band Physics in Wurtzite GaN

Published online by Cambridge University Press:  10 February 2011

T. Azuhata ,
T. Sota ,
S. Chichibu ,
A. Kuramata ,
K. Horino ,
M. Yamaguchi ,
T. Yagi  and
S. Nakamura
T. Azuhata
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku, Tokyo 169, JAPAN
T. Sota
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku, Tokyo 169, JAPAN
S. Chichibu
Affiliation:
Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, JAPAN
A. Kuramata
Affiliation:
Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, JAPAN
K. Horino
Affiliation:
Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, JAPAN
M. Yamaguchi
Affiliation:
Faculty of Engineering, Hokkaido University, Sapporo 060, JAPAN
T. Yagi
Affiliation:
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, JAPAN
S. Nakamura
Affiliation:
Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, JAPAN
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Abstract

We present a summary of recent progress towards the understanding of the valence-band physics in wurtzite GaN. Systematic studies have been performed on the strain dependence of the free exciton resonance energies by photoreflectance measurements using well-characterized samples. Analyzing the experimental data with the Hamiltonian appropriate for the valence bands, the values have been determined of the crystal field splitting, the spin-orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free exciton ground states as well as on the valence band parameters. Using the obtained values and the generalized Elliott formula, the fundamental optical absorption spectra obtained experimentally were analyzed. The values of the elastic stiffness constants, which play a crucial role to determine the shear deformation potential constants, are also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 445
Copyright
Copyright © Materials Research Society 1997

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