5 results
Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I16-06
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- 2006
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High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF05-02
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- 2005
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AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E6.3
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- 2004
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High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y7.3
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- 2003
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Electrical Properties of GaN/Si Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.23
- Print publication:
- 2002
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