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Electrical Properties of GaN/Si Grown by MOCVD

Published online by Cambridge University Press:  11 February 2011

Seikoh Yoshida ,
Jiang Li ,
Takahiro Wada  and
Hironari Takehara
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Jiang Li
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Takahiro Wada
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
Hironari Takehara
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd 2–4–3, Okano, Nishi-ku, Yokohama, 220–0073, Japan
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Abstract

GaN growth on Si substrate is very attractive for realizing low cost electronic devices. We grew a thin GaN film on p-type Si(111) substrate using AlGaN high temperature buffer without using a conventional low temperature buffer. A homogeneous buffer layer was obtained at 1093 K and a homogenous 500 nm thick GaN layer was also obtained without any crack. Using a transmission electron microscopy (TEM), we observed that the cross-section of GaN and AlGaN buffer was very smooth and also the surface of GaN was flat although the threading dislocations were observed. Furthermore, we directly fabricated a metal semiconductor field effect transistor (MESFET) using a 500 nm-thick GaN/Si without any high resistive GaN layer. A Schottky electrode was Pt/Au and an ohmic electrode was Al/Ti/Au. A Schottky breakdown voltage was over 100 V. Also, we confirmed a high temperature operation of the MESFET using a thin GaN film on Si substrate at 573 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.23
Copyright
Copyright © Materials Research Society 2003

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References

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