Skip to main content Accessibility help
×
Home

Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

  • Yuki Niiyama (a1), Sadahiro Kato (a2), Yoshihiro Sato (a3), Masayuki Iwami (a4), Jiang Li (a5), Hironari Takehara (a6), Hiroshi Kambayashi (a7), Nariaki Ikeda (a8) and Seikoh Yoshida (a9)...

Abstract

We investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.

Copyright

References

Hide All
1. Baliga, B. J., “Semiconductors for high-voltage, vertical channel field effect transistors,” J. Appl. Phys. Vol.53, pp. 17591764, 1982.
2. Baliga, B. J., “Power Semiconductor Device Figure of Merit for High-Frequency Applications,” IEEE Electron Device Lett. Vol.10, pp. 455457, 1989.
3. Guha, S., Bojarczuk, N. A.: Appl. Phys. Lett. 72, 415 (1998).
4. Yang, J. W., Lunev, A., Simin, G., Chitnis, A., Shatalov, M., Khan, M. A., van Nostrand, J. E. and Gaska, R.: Appl. Phys. Lett. 76, 273 (2000).
5. Dadgar, A., Christen, J., Riemann, T., Richter, S., Blaesing, J., Diez, A., Krost, A., Alam, A., and Heuken, M.: Appl. Phys. Lett. 78, 2211 (2001).
6. Wang, D., Hiroyama, Y., Tamura, M., Ichikawa, M. and Yoshida, S.: Appl. Phys. Lett. 77, 1846 (2000).
7. Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymv, A., Saygi, S., Yang, J., Khan, A., Shur, M. S., and Gaska, R., Jpn. J. Appl. Phys. 40, L1142 (2001).
8. Vellas, N., Gaquiere, C., Guhel, Y., Werquin, M., Bue, F., Auby, R., Delage, S., Semond, F., and Jaeger, J. C. Dc IEEE Electron Device Lett. 23, 46 (2002).
9. Yoshida, S., Katoh, S., Takehara, H., Satoh, Y., Li, J. Ikeda, N., Hataya, K., and Sasaki, H.: Phys. Stat. Sol. (a) 203, 1739 (2006).
10. Xing, H., Green, D. S., Yu, H., Mates, T., Kozodoy, P., Keller, S., Denbaars, S. P., and Mishra, U. K.: Jpn. J. Appl. Phys. 42, 50 (2003).

Keywords

Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

  • Yuki Niiyama (a1), Sadahiro Kato (a2), Yoshihiro Sato (a3), Masayuki Iwami (a4), Jiang Li (a5), Hironari Takehara (a6), Hiroshi Kambayashi (a7), Nariaki Ikeda (a8) and Seikoh Yoshida (a9)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed