4 results
Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 481
- Print publication:
- 1999
-
- Article
- Export citation
Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 385
- Print publication:
- 1999
-
- Article
- Export citation
Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 65
- Print publication:
- 1999
-
- Article
- Export citation
High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 83
- Print publication:
- 1999
-
- Article
- Export citation