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Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

Published online by Cambridge University Press:  10 February 2011

H. F. Luan ,
A. Y. Mao ,
S. J. Lee ,
T. Y. Luo  and
D. L. Kwong
H. F. Luan
Affiliation:
Microelectronics Research Center. Department of Electrical and Computer Engineering, The University of Texas at Austin, TX
A. Y. Mao
Affiliation:
Microelectronics Research Center. Department of Electrical and Computer Engineering, The University of Texas at Austin, TX
S. J. Lee
Affiliation:
Microelectronics Research Center. Department of Electrical and Computer Engineering, The University of Texas at Austin, TX
T. Y. Luo
Affiliation:
Microelectronics Research Center. Department of Electrical and Computer Engineering, The University of Texas at Austin, TX
D. L. Kwong
Affiliation:
Microelectronics Research Center. Department of Electrical and Computer Engineering, The University of Texas at Austin, TX
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Abstract

We have fabricated very thin TiO2 film (Teq∼20Å) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to sputtering is critical in reducing the leakage current. XPS results show that the temperature RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 481
Copyright
Copyright © Materials Research Society 1999

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References

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