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Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

  • H. F. Luan (a1), A. Y. Mao (a1), S. J. Lee (a1), T. Y. Luo (a1) and D. L. Kwong (a1)...

Abstract

We have fabricated very thin TiO2 film (Teq∼20Å) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to sputtering is critical in reducing the leakage current. XPS results show that the temperature RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

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Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

  • H. F. Luan (a1), A. Y. Mao (a1), S. J. Lee (a1), T. Y. Luo (a1) and D. L. Kwong (a1)...

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