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Growth and characteristics of AlGaN/GaN heterostructures on sp2-bonded BN by metal–organic chemical vapor deposition
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- Journal:
- Journal of Materials Research / Volume 31 / Issue 15 / 15 August 2016
- Published online by Cambridge University Press:
- 28 July 2016, pp. 2204-2213
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- 15 August 2016
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Reverse-annealing phenomenon during the high-temperature implantation of Ar+ into GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.12.1
- Print publication:
- 2001
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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 275-280
- Print publication:
- 1999
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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.38
- Print publication:
- 1998
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