6 results
Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 281-286
- Print publication:
- 1999
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Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 429-434
- Print publication:
- 1999
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Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.79
- Print publication:
- 1998
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Effects of Surface Preparation on Epitaxial GaN on 6H-SIC Deposited Via Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.39
- Print publication:
- 1998
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Luminescence Properties of Periodic Disordered Thin Layer GaAs/AlAs Superlattices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 358 / 1994
- Published online by Cambridge University Press:
- 28 February 2011, 999
- Print publication:
- 1994
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Optimization of Jc for Photo-Assisted MOCVD Prepared YBCO Thin Films by Robust Design
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- Journal:
- MRS Online Proceedings Library Archive / Volume 335 / 1993
- Published online by Cambridge University Press:
- 15 February 2011, 279
- Print publication:
- 1993
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