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Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

  • C. H. Wei (a1), Z. Y. Xie (a1), J. H. Edgar (a1), K. C. Zeng (a2), J. Y. Lin (a2), H. X. Jiang (a2), C. Ignatiev (a3), J. Chaudhuri (a3) and D. N. Braski (a4)...

Abstract

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

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Footnotes

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MRS Internet J. Nitride Semicond. Res. 4S1, G3.79(1999)

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References

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