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Non-destructive Imaging of Extend Defects in III-nitride Thin film Structures Using Electron Channelling Contrast Imaging
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- Journal:
- Microscopy and Microanalysis / Volume 23 / Issue S1 / July 2017
- Published online by Cambridge University Press:
- 04 August 2017, pp. 570-571
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- July 2017
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Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 1024-1025
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- August 2014
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Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films
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- Journal:
- Microscopy and Microanalysis / Volume 18 / Issue S2 / July 2012
- Published online by Cambridge University Press:
- 23 November 2012, pp. 684-685
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- July 2012
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Rare earth doped III-nitrides for optoelectronics
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- Journal:
- The European Physical Journal - Applied Physics / Volume 36 / Issue 2 / November 2006
- Published online by Cambridge University Press:
- 28 October 2006, pp. 91-103
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- November 2006
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SITE MULTIPLICITY OF RARE EARTH IONS IN III-NITRIDES
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E9.6
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- 2004
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Structure and electrical activity of rare-earth dopants in selected III-Vs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.3
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- 2003
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