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Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

Published online by Cambridge University Press:  27 August 2014

C. Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
G. Naresh-Kumar
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
N. Allehiani
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
S. Kraeusel
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
B. Hourahine
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
S. Vespucci
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
D. Thomson
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
J. Bruckbauer
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
G. Kusch
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
P. R. Edwards
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
R. W. Martin
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK
C. Mauder
Affiliation:
AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany
A. P. Day
Affiliation:
Aunt Daisy Scientific Ltd, Claremont House, High St, Lydney GL15 5DX, UK
A. Winkelmann
Affiliation:
Bruker Nano GmbH, Am Studio 2D, 12489 Berlin, Germany
A. Vilalta-Clemente
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
A. J. Wilkinson
Affiliation:
Department of Materials, University of Oxford, Oxford OX1 3PH, UK
P. J. Parbrook
Affiliation:
Tyndall National Institute, University College Cork, “Lee Maltings”, Cork, Ireland
M. J. Kappers
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
M. A. Moram
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK Department of Materials, Imperial College London, London SW7 2AZ, UK
R. A. Oliver
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK
P. Shields
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK
E. D. Le Boulbar
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, UK
D. Maneuski
Affiliation:
School of Physics & Astronomy, SUPA, University of Glasgow, Glasgow G12 8QQ, UK
V. O'Shea
Affiliation:
School of Physics & Astronomy, SUPA, University of Glasgow, Glasgow G12 8QQ, UK
K. P. Mingard
Affiliation:
National Physical Laboratory, Teddington, TW11 0LW, UK
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Abstract

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Abstract
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Trager-Cowan, C., et al, Phys. Rev. B 75 (2007) p. 085301.
[2] Naresh-Kumar, G., et al, Phys. Status Solidi A 209 (2012) p. 424.
[3] Naresh-Kumar, G., et al, Phy. Rev. Lett. 108 (2012) p. 135503.
[4] Naresh-Kumar, G., et al, Appl. Phys. Lett. 102 (2013) p. 142103.
[5] Naresh-Kumar, G., et al, Micros. Microanal. 20 (2014) p. 55.
[6] Ripley, B. D. & Roy, J. Statist. Soc. Ser. B 39 (1977) p. 172.
[7] This work was carried out with the partial support of the EU under the ITN RAINBOW (http://rainbow.ensicaen.fr/), grant agreement No: PITN-GA-2008-213238 and EPSRC grant No: EP/D058686/1.

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Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors
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