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Non-destructive Imaging of Extend Defects in III-nitride Thin film Structures Using Electron Channelling Contrast Imaging

Published online by Cambridge University Press:  04 August 2017

G. Naresh-Kumar
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
M. Nouf-Allehiani
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
D. Thomson
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
E. Pascan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
B. Hourahine
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK
C. Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow, UK

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Naresh-Kumar, G., etal, Phys. Rev. Lett. 108 2012). p. 135503.Google Scholar
[2] Naresh-Kumar, G., et al, Appl. Phys. Lett 102 2013). p. 142103.Google Scholar
[3] Nouf-Allehiani, M., et al. submitted to Phys. Rev. B, (2017).Google Scholar
[4]Pascal, E. et al. under review in Materials Today Proceedings (2017).Google Scholar
[5] The authors acknowledge support from the EPSRC, Grant Number EP/M015181/1, “Manufacturing of nano-engineered III-N semiconductors”.Google Scholar