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6 - Large and packaged transistors

Published online by Cambridge University Press:  25 October 2011

Jens Engelmann
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Franz-Josef Schmückle
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Matthias Rudolph
Affiliation:
Brandenburg University of Technology
Matthias Rudolph
Affiliation:
Brandenburg University of Technology
Christian Fager
Affiliation:
Chalmers University of Technology, Gothenberg
David E. Root
Affiliation:
Agilent Technologies, Santa Rosa
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Summary

Introduction

Microwave power transistors commonly internally consist of a number of smaller transistor cells combined together in order to reach the desired performance. The individual transistor cells are positioned side by side, sometimes repeated in two dimensions. But often, only one single line of parallel cells is used, since power splitting and combining is less challenging compared to other configurations. Relying on an array of small transistors instead of only one large power transistor allows higher power at high frequencies to be realized. Reaching high frequencies calls for small and fast transistors. Inherently, reducing the physical size of a transistor will reduce the power-handling capabilities. Increasing the size of a single transistor with just one emitter or drain connection, on the other hand, is no option in the microwave regime, since unequal current or heat distribution within the device will rapidly degrade performance. Proper combination of many small transistors within a package to get one power device is therefore the only option. In addition to the advantages regarding electrical behavior, thermal management of the power transistor can be significantly simplified.

Various configurations of transistors in packages have emerged in recent years. Common to most of these solutions is the arrangement in bars, as single or multiline (i.e., 2D). However, 2D configurations of bars restrict the power transistor to lower frequencies where line lengths in general (e.g., bondwires) are small compared to the wavelength.

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Publisher: Cambridge University Press
Print publication year: 2011

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References

[1] Brody, D. and Branner, G. R., “Amodeling technique for internallymatched bipolar microwave transistor networks,” Proc. 37th Midwest Circuits Syst. Symp., Lafayette, LA, Aug. 1994, pp. 1224–1226.Google Scholar
[2] Johansson, T. and Arnborg, T., “A novel approach to 3-D modeling of packaged RF power transistors,” IEEE Trans. Microw. Theory Tech., vol. 47, pp. 760–68, June 1999.CrossRefGoogle Scholar
[3] Liang, T., Plá, J. A., Aaen, P. H., and Mahalingam, M., “Equivalent-circuit modeling and verification of metal-ceramic packages for RF and microwave power transistors,” IEEE Trans. Microw. Theory Tech., vol. 47, pp. 709–714, June 1999.CrossRefGoogle Scholar
[4] Mouthaan, K., “Modeling of RF high power bipolar transistors,” Ph.D. dissertation, Dept. Microelectron. Comput. Eng., Delft Univ. Technol., Delft, The Netherlands, 2001.
[5] Aaen, P. H., Plá, J. A., and Balanis, C. A., “On the development of CAD techniques suitable for the design of high-power RF transistors,” IEEE Trans. Microw. Theory Tech., vol. 53, pp. 3067–3074, Oct. 2005.CrossRefGoogle Scholar
[6] Aaen, P. H., Plá, J. A., and Balanis, C. A., “Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors,” IEEE Trans. Microw. Theory Tech., vol. 54, pp. 3052–3059, July 2006.CrossRefGoogle Scholar
[7] Aaen, P. H., Plá, J. A., and Wood, J., Modeling and Characterization of RF and Microwave Power FETs. Cambridge Univ. Press, 2007.CrossRefGoogle Scholar
[8] Flucke, J., Schmückle, F.-J., Heinrich, W., and Rudolph, M., “An accurate package model for 60W GaN power transistors,” Proc. 4th Eurp. Microw. Integr. Circ. Conf. (EuMIC), 2009, pp. 152–155.Google Scholar
[9] Rudolph, M., Schnieder, F., and Heinrich, W., “Investigation of thermal crunching effects in fishbone-type layout power GaAs-HBTs,” Dig. 12th GAAS symp., 2004, pp. 435–438.Google Scholar
[10] Yee, K. S., “Numerical solution of initial boundary value problems involving Maxwell's equations in isotropic media,” IEEE Trans. Antennas Propag., vol. 14, pp. 302–307, 1966.Google Scholar
[11] Thiel, W. and Menzel, W., “Full-wave design and optimization of mm-wave diode-based circuits in finline technique,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 12, pp. 2460–2466, Dec. 1999.CrossRefGoogle Scholar
[12] Talukder, P. K., “Finite-difference-frequency-domain simulation of electrically large microwave structures using PML and internal ports,” Ph.D. dissertation, Fakultät IV, Berlin Institute of Technology, Jan. 30, 2009.
[13] Flucke, J., Schmückle, F.-J., Heinrich, W., and Rudolph, M., “On the magnetic coupling between bondwires in power-transistor packages,” Proc. 5th German Microw. Conf. (GeMiC) 2010.Google Scholar
[14] Würfl, J., Behtash, R., Lossy, R., Liero, A., Heinrich, W., Tränkle, G., Hirche, K., and Fischer, G., “Advances in GaN-based discrete power devices for L- and X-band applications,” Proc. 36th Eur.Microw. Conf. (EuMC), 2006, pp. 1716–1718.CrossRefGoogle Scholar
[15] Angelov, I., Bengtsson, L., and Garcia, M., “Extension of the Chalmers nonlinear HEMT and MESFET model,” IEEE Trans. Microw. Theory Tech., vol. 44, pp. 1664–1674, Oct. 1996.CrossRefGoogle Scholar
[16] Angelov, I., Desmaris, V., Dynefors, K., Nilsson, P. A., Rorsman, N., and Zirath, H., “On the large-signal modeling of Al-GaN/GaN HEMTs and SiC MESFETs,” Proc. 13th GAAS Symp., Paris, 2005, pp. 309–312.Google Scholar

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