Nonlinear Transistor Model Parameter Extraction Techniques

doi:10.1017/CBO9781139014960

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Nonlinear Transistor Model Parameter Extraction Techniques

Nonlinear Transistor Model Parameter Extraction Techniques

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Aaen, Peter H. Wood, John Bridges, Daren Zhang, Lei Johnson, Eric Pla, Jaime A. Barbieri, Travis Snowden, Christopher M. Everett, John P. and Kearney, Michael J. 2012. Multiphysics Modeling of RF and Microwave High-Power Transistors. IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue. 12, p. 4013.

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Root, David 2012. Future Device Modeling Trends. IEEE Microwave Magazine, Vol. 13, Issue. 7, p. 45.

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Google Scholar

Blakey, Peter 2012. Transistor Modeling and TCAD. IEEE Microwave Magazine, Vol. 13, Issue. 7, p. 28.

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Google Scholar

Prasad, Ankur Fager, Christian Thorsell, Mattias Andersson, Christer M. and Yhland, Klas 2014. Symmetrical Large-Signal Modeling of Microwave Switch FETs. IEEE Transactions on Microwave Theory and Techniques, Vol. 62, Issue. 8, p. 1590.

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Colantonio, Paolo Cipriani, Elisa Giofrè, Rocco Piazzon, Luca and Giannini, Franco 2014. Wiley Encyclopedia of Electrical and Electronics Engineering. p. 1.

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Huang, An-Dong Zhong, Zheng Wu, Wen and Guo, Yong-Xin 2016. An Artificial Neural Network-Based Electrothermal Model for GaN HEMTs With Dynamic Trapping Effects Consideration. IEEE Transactions on Microwave Theory and Techniques, Vol. 64, Issue. 8, p. 2519.

CrossRef

Google Scholar

Jarndal, Anwar Essaadali, Riadh and Kouki, Ammar B. 2016. A Reliable Model Parameter Extraction Method Applied to AlGaN/GaN HEMTs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 35, Issue. 2, p. 211.

CrossRef

Google Scholar

Hussein, Ahmed S. and Jarndal, Anwar H. 2016. Reliable particle-swarm-optimization based parameter extraction method applied to GaN HEMTs. p. 1.

CrossRef

Google Scholar

Hussein, Ahmed S. and Jarndal, Anwar H. 2017. An improved reliable PSO based parameter extraction method applied to GaN HEMTs for mm-Wave applications. p. 1.

CrossRef

Google Scholar

Jarndal, Anwar and Kouki, Ammar 2017. Efficient modeling of GaN HEMTs for linear and nonlinear circuits design. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 30, Issue. 1, p. e2100.

CrossRef

Google Scholar

Zhao, Xiaodong Xu, Yuehang Wen, Zhang Jia, Yonghao Zhang, Tiedi Yan, Bo and Xu, Ruimin 2017. A new Inter-electrode coupling capacitance extraction method for deep-submicron AlGaN/GaN HEMTs. IEICE Electronics Express, Vol. 14, Issue. 15, p. 20170559.

CrossRef

Google Scholar

Hussein, Ahmed S. and Jarndal, Anwar H. 2017. On hybrid model parameter extraction of GaN HEMTs based on GA, PSO, and ABC optimization. p. 1.

CrossRef

Google Scholar

Yan, Shuxia Jin, Xiaoyi Zhang, Yaoqian Shi, Weiguang and Wen, Jia 2018. Neurospace Mapping Modeling for Packaged Transistors. Mathematical Problems in Engineering, Vol. 2018, Issue. , p. 1.

CrossRef

Google Scholar

Prasad, Ankur Thorsell, Mattias Zirath, Herbert and Fager, Christian 2018. Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential. IEEE Transactions on Microwave Theory and Techniques, Vol. 66, Issue. 2, p. 845.

CrossRef

Google Scholar

Gonçalves, Cristiano F. Nunes, Luís Cótimos Cabral, Pedro M. and Pedro, José C. 2018. Pulsed I /V and S -parameters measurement system for isodynamic characterization of power GaN HEMT transistors. International Journal of RF and Microwave Computer-Aided Engineering, Vol. 28, Issue. 8, p. e21515.

CrossRef

Google Scholar

Yuan, Ye Zhong, Zheng Guo, Yong‐xin and Mu, Shanxiang 2019. A novel large‐signal FET model considering trapping‐induced dispersions. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 32, Issue. 3, p. e2552.

CrossRef

Google Scholar

Jarndal, Anwar H. and Hussein, Ahmed S. 2019. Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization. International Journal of RF and Microwave Computer-Aided Engineering, Vol. 29, Issue. 10,

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Edited by Matthias Rudolph, Brandenburg University of Technology , Christian Fager, Chalmers University of Technology, Gothenberg , David E. Root, Agilent Technologies, Santa Rosa

Publisher: Cambridge University Press
Online publication date: October 2011
Print publication year: 2011
Online ISBN: 9781139014960
DOI: https://doi.org/10.1017/CBO9781139014960

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Nonlinear Transistor Model Parameter Extraction Techniques
Edited by Matthias Rudolph, Christian Fager, David E. Root
Online ISBN: 9781139014960

Book DOI: https://doi.org/10.1017/CBO9781139014960
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Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

'Modeling is at the heart of any modern design process and improvements in transistor modeling have made a significant, but often unrecognized, contribution to the wireless revolution impacting our daily lives. The authors and contributors have collaborated across academic and company boundaries to bring together the latest techniques in a comprehensive and practical review of transistor modeling. This book is destined to become the 'go to' reference on the subject.'

Mark Pierpoint - Agilent Technologies

'Without accurate component models, even the most powerful circuit simulator cannot provide meaningful results. The old saying, 'Junk in-Junk out', summarizes the process. Nonlinear Transistor Model Parameter Extraction Techniques contains a wealth of theoretical and practical information. It should be read by every active RF/Microwave circuit … as well as device designer.'

Les Besser - author of COMPACT and founder of Besser Associates

'Nonlinear Transistor Model Parameter Extraction Techniques is an excellent book that covers this extremely important topic very well … the editors have done a thorough job in putting together a complete summary of the important issues in this area. For a range of device technologies, the main themes that need to be addressed including measurement, extraction, DC and non-linear modelling, noise modelling, thermal issues and package modelling are covered in a clear but detailed manner, by experts in each area. I would highly recommend this title.'

John Atherton - WIN Semiconductors

'… a very nice guide to how the critical issues of model parameter of extraction are being solved right now and so it is a great resource for designers and modeling groups.'

Source: IEEE Microwave Magazine

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Nonlinear Transistor Model Parameter Extraction Techniques

This book has been cited by the following publications. This list is generated based on data provided by CrossRef.

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Contents

Frontmatter
pp i-vi

Contents
pp vii-ix

List of contributors
pp x-xii

Preface
pp xiii-xiv

1 - Introduction
pp 1-17

2 - DC and thermal modeling: III–V FETs and HBTs
pp 18-42

3 - Extrinsic parameter and parasitic elements in III–V HBT and HEMT modeling
pp 43-85

4 - Uncertainties in small-signal equivalent circuit modeling
pp 86-122

5 - The large-signal model: theoretical foundations, practical considerations, and recent trends
pp 123-170

6 - Large and packaged transistors
pp 171-205

7 - Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors
pp 206-256

8 - Optimizing microwave measurements for model construction and validation
pp 257-286

9 - Practical statistical simulation for efficient circuit design
pp 287-317

10 - Noise modeling
pp 318-349

Index
pp 350-352

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