The present paper reports on the fabrication of In2O3 layers by oxidation of InN thin films deposited on n-type silicon substrate by magnetron reactive sputtering. The subsequent solar cells using the
resulting In2O3/Si heterojunctions exhibit an ideality factor,
deduced from current-voltage (I – V) characteristics of around 2.52 at a forward bias of 0.5 V. Other measured parameters were the short-circuit current (I
), the open-circuit voltage (V
), the maximum output power (P
), the fill factor (FF) and the efficiency (
), which had values of were 3.17 mA, 0.75 V, 0.869 mW, 0.365 and 9.66 %, respectively, under AM 1.5 illumination. The value of series resistance was around 107 Ω. In2O3 films formed by the oxidation of InN have a higher open-circuit voltage than In2O3-based solar cells formed by the oxidation of indium.