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Synthesis of GaN nanorods using Tantalum catalyst by magnetron sputtering

Published online by Cambridge University Press:  31 October 2007

Hong Li ,
Chengshan Xue ,
Huizhao Zhuang ,
Jinhua Chen ,
Zhaozhu Yang  and
Lixia Qin
Hong Li
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Chengshan Xue*
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Huizhao Zhuang
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Jinhua Chen
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Zhaozhu Yang
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Lixia Qin
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
*
xuechengshan@sdnu.edu.cn
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Abstract

Single crystalline wurzite GaN nanorods are successfully synthesized on the tantalum catalyzed Si substrate by RF magnetron sputtering. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectra (FTIR), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL). The results show that the nanorods have a hexagonal wurtzite structure with diameters ranging from 80 to 200 nm and lengths typically up to 10 µm. The PL spectrum exhibits a strong UV light emission at 364 nm. The growth mechanism of the crystalline GaN nanorods is discussed briefly.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 40 , Issue 2 , November 2007 , pp. 129 - 131
Copyright
© EDP Sciences, 2007

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