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Monitoring and Controlling of Strain During Mocvd of AlGaN for UV Optoelectronics
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- 15 February 2011, G7.7
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Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy
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- 10 February 2011, G11.6
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He
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- 15 February 2011, G6.56
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Etch Processing of III-V Nitrides
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- 10 February 2011, G10.5
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Effects of Susceptor Geometry on GaN Growth on SI(111) with a New Mocvd Reactor
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- 15 February 2011, G3.53
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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
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- 15 February 2011, G6.48
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Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
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- 10 February 2011, G11.7
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Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
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- 15 February 2011, G6.4
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Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells
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- 15 February 2011, G6.44
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Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence
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- 10 February 2011, G10.6
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Theoretical Studies of ZnO and Related MgxZn1-xO Alloy Band Structures
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- 15 February 2011, G6.8
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Spectroscopy of Proton Implanted GaN
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- 15 February 2011, G5.9
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Xps Study of Oxygen Adsorption on (3X3) Reconstructed MBE Grown GaN Surfaces
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- 15 February 2011, G6.26
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Microstructure of GaN Grown on (111) Si by MOCVD
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- 15 February 2011, G3.72
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Cubic InGaN Grown by Mocvd
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- 15 February 2011, G3.25
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Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
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- 15 February 2011, G3.13
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Photoluminescence of Fs-GaN Treated in Alcoholic Sulfide Solutions
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- 15 February 2011, G6.14
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Doping of Aigan Alloys
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- 10 February 2011, G10.4
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Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN
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- 10 February 2011, G11.3
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Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
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- 15 February 2011, G6.25
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