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Microstructure of GaN Grown on (111) Si by MOCVD

Published online by Cambridge University Press:  15 February 2011

D. M. Follstaedt ,
J. Han ,
P. Provencio  and
J. G. Fleming
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
P. Provencio
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. G. Fleming
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

Gallium nitride was grown on (111) Si by MOCVD by depositing an AlN buffer at 1080°C followed by GaN at 1060°C. The 2.2 μm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were nonetheless able to examine the material between cracks with TEM. The character and arrangement of dislocations are much like those of GaN grown on Al2O3: ∼2/3 pure edge and ∼1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly misoriented with respect to neighboring material. The 30 nm AlN buffer is continuous, indicating that AIN wets the Si, in contrast to GaN on Al2O3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.72
Copyright
Copyright © Materials Research Society 1999

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