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Xps Study of Oxygen Adsorption on (3X3) Reconstructed MBE Grown GaN Surfaces

Published online by Cambridge University Press:  15 February 2011

R. A. Beach ,
E. C. Piquette ,
T. C. McGill  and
T. J. Watson
R. A. Beach
Affiliation:
Sr. Laboratories of Applied Physics 128-95, California Institute of Technology, Pasadena, CA 91125
E. C. Piquette
Affiliation:
Sr. Laboratories of Applied Physics 128-95, California Institute of Technology, Pasadena, CA 91125
T. C. McGill
Affiliation:
Sr. Laboratories of Applied Physics 128-95, California Institute of Technology, Pasadena, CA 91125
T. J. Watson
Affiliation:
Sr. Laboratories of Applied Physics 128-95, California Institute of Technology, Pasadena, CA 91125
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Abstract

The incorporation of oxygen onto the (3x3) reconstructed surface of GaN(0001) has been studied using X-ray Photoelectron Spectroscopy (XPS). It was found that the (3x3) reconstruction corresponds to a fractional Ga adlayer atop a Ga terminated GaN surface. Our measurements indicate a surface coverage of 1.15 ± 0.2 monolayers of relaxed Ga on the surface. The binding energy separation between the relaxed surface Ga3d core level and bulk Ga3d level was measured to be 1.1 ± 0.1 eV. A metallic component extending from the bulk GaN valence band maximum out to 0 eV was also present in the XPS spectrum. The separation between the bulk valence band maximum and the Fermi level of the metallic component was found to be 2.1 ± 0. 1 eV. The relaxation of the surface Ga was found to decrease with oxygen exposure indicating Ga-O bonding, with oxygen adsorption terminating at 1.3 ± 0.2 monolayers. The Ols core level was found to have a FWHM of 2.0 ± 0.1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.26
Copyright
Copyright © Materials Research Society 1999

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