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New Large Area Silicon Drift Detectors - Fast Analysis without Compromise

Published online by Cambridge University Press:  14 March 2018

Clair Collins
Affiliation:
Oxford Instruments, High Wycombe, Bucks, England
Neil Rowlands*
Affiliation:
Oxford Instruments, High Wycombe, Bucks, England
Peter Statham
Affiliation:
Oxford Instruments, High Wycombe, Bucks, England
James Holland
Affiliation:
Oxford Instruments, High Wycombe, Bucks, England

Extract

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Recent advances in silicon drift detector (SDD) design have set a new benchmark for Energy Dispersive X-ray spectroscopy (EDS). Not only do these detectors offer all the benefits users have come to expect from SDD—high count rates, liquid nitrogen-free analysis and excellent resolution—but large active areas and unique technology allow the user to collect EDS data at normal imaging beam currents and lower accelerating voltages in seconds.

Energy Dispersive Spectrometry (EDS) has been used for many years to analyse the chemical composition of materials. Historically, EDS detectors used a bulk silicon crystal drifted with lithium. Although such Si(Li) detectors had exceptionally good performance, they had limited count rate capability and operated at very low temperatures thus requiring cooling with liquid nitrogen.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2009

References

[1] Statham, P.J., Microchimica Acta, 155, 289294, 2006.Google Scholar