Depositions of high quality SiO2 and SnO2 films from the reaction of homoleptic amido precursors M(NMe2)4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition reactor. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450 °C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 ± 5 atom °. They are deposited with growth rates from 380 to 900 Å/min. The refractive indexes of the SiO2 films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm−1. X-Ray diffraction studies reveal that the SiO2 film deposited at 350°C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO2 films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10−2 to 10−3 Ω cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350°C is crystalline cassitterite with some (101) orientation.