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Defect Analysis of Silicon Irradiated by Pulsed Ion Beams

Published online by Cambridge University Press:  15 February 2011

Siegfried Mader  and
Wei-Kan Chu
Siegfried Mader
Affiliation:
IBM General Technology Division, Hopewell Junction, New York
Wei-Kan Chu
Affiliation:
IBM General Technology Division, Hopewell Junction, New York
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Abstract

Silicon wafers with (001), (011), and (111) orientations were irradiated with pulsed Ba beams that caused shallow surface melting. Upon resolidification the dislocations are trapped with configurations which are characteristically different for each orientation. A novel feature are dislocations with a [100] Burgers vectors. The dislocations accommodate part of the thermal misfit between substrate and solidifying layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 395
Copyright
Copyright © Materials Research Society 1982

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References

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