26 results
Effect of n doped amorphous layer between microcrystalline i/n layer on the performance of micromorph tandem solar cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1771 / 2015
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- 29 April 2015, pp. 9-15
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- 2015
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Key Technologies of Heterojunction Solar Cell and Module Manufacturing
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- MRS Online Proceedings Library Archive / Volume 1771 / 2015
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- 19 May 2015, pp. 25-32
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- 2015
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The Research and Development of the Third Generation of Photovoltaic Modules
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- MRS Online Proceedings Library Archive / Volume 1538 / 2013
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- 29 May 2013, pp. 151-160
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- 2013
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The Research and Development for Collecting, Emitting, and Manipulating Energy
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- MRS Online Proceedings Library Archive / Volume 1396 / 2012
- Published online by Cambridge University Press:
- 16 January 2012, mrsf11-1396-o02-01
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- 2012
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Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
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- MRS Online Proceedings Library Archive / Volume 1068 / 2008
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- 01 February 2011, 1068-C03-07
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- 2008
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RRAM electronics and Switching Mechanism
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- MRS Online Proceedings Library Archive / Volume 997 / 2007
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- 01 February 2011, 0997-I04-01
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- 2007
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Resistance Switching In Ferroelectric Materials
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- MRS Online Proceedings Library Archive / Volume 997 / 2007
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- 01 February 2011, 0997-I05-02
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- 2007
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Device Structures and Charicterization of one Tansistor Ferroelectric Memory Devices
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- MRS Online Proceedings Library Archive / Volume 830 / 2004
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- 01 February 2011, D2.10
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- 2004
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Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes
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- MRS Online Proceedings Library Archive / Volume 786 / 2003
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- 01 February 2011, E9.9/C9.9
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- 2003
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Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes
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- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C9.9/E9.9
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- 2003
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Integration Processes and Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 747 / 2002
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- 11 February 2011, T4.6/U9.6
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- 2002
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Integration Processes and Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 748 / 2002
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- 11 February 2011, U9.6/T4.6
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- 2002
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Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf)O2/Si One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 688 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, C11.2.1
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- 2001
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Characteristics of Memory Window and Retention Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 688 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, C4.3.1
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- 2001
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The Properties of Mfmos and MFOS Capacitors with High K Gate Oxides for one Transistor Memory Applications
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- MRS Online Proceedings Library Archive / Volume 655 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, CC3.10.1
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- 2000
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The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes
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- MRS Online Proceedings Library Archive / Volume 596 / 1999
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- 10 February 2011, 199
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- 1999
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Thermal Stability of Ir/TaN Electrode/Barrier on Thin Gate Oxide for MFMOS one Transistor Memory Application
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- MRS Online Proceedings Library Archive / Volume 596 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 67
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- 1999
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Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application
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- MRS Online Proceedings Library Archive / Volume 541 / 1998
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- 10 February 2011, 579
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- 1998
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MOCVD Process of Ferroelectric Lead Germanate Thin Films and Bottom Electrode Effects
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- MRS Online Proceedings Library Archive / Volume 541 / 1998
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- 10 February 2011, 549
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- 1998
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Structure Development Studies of SrBi2(Ta1−xNbx)2O9 Thin Films
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- Journal of Materials Research / Volume 12 / Issue 8 / August 1997
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2165-2174
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- August 1997
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