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Effect of n doped amorphous layer between microcrystalline i/n layer on the performance of micromorph tandem solar cells

Published online by Cambridge University Press:  29 April 2015

Jingjing Yang ,
Tingkai Li ,
Xueshi Tan ,
Feng Zhang  and
Bingxue Mao
Jingjing Yang
Affiliation:
Hunan Gongchuang Photovoltaic Science & Technology Co.,Ltd, Hengyang City in Hunan 421005, PRC, No.1 Hongyuan Road, Baishazhou Industry Zone, Hengyang City, Hunan Province of China, TEL: +86 734 8678582 Ext. 8901, Email: yangjingjingkx@163.com
Tingkai Li
Affiliation:
Hunan Gongchuang Photovoltaic Science & Technology Co.,Ltd, Hengyang City in Hunan 421005, PRC, No.1 Hongyuan Road, Baishazhou Industry Zone, Hengyang City, Hunan Province of China, TEL: +86 734 8678582 Ext. 8901, Email: yangjingjingkx@163.com
Xueshi Tan
Affiliation:
Hunan Gongchuang Photovoltaic Science & Technology Co.,Ltd, Hengyang City in Hunan 421005, PRC, No.1 Hongyuan Road, Baishazhou Industry Zone, Hengyang City, Hunan Province of China, TEL: +86 734 8678582 Ext. 8901, Email: yangjingjingkx@163.com
Feng Zhang
Affiliation:
Hunan Gongchuang Photovoltaic Science & Technology Co.,Ltd, Hengyang City in Hunan 421005, PRC, No.1 Hongyuan Road, Baishazhou Industry Zone, Hengyang City, Hunan Province of China, TEL: +86 734 8678582 Ext. 8901, Email: yangjingjingkx@163.com
Bingxue Mao
Affiliation:
Hunan Gongchuang Photovoltaic Science & Technology Co.,Ltd, Hengyang City in Hunan 421005, PRC, No.1 Hongyuan Road, Baishazhou Industry Zone, Hengyang City, Hunan Province of China, TEL: +86 734 8678582 Ext. 8901, Email: yangjingjingkx@163.com
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Abstract

Pin/pin “micromorph” tandem solar cells were manufactured by the industrial production line of Hunan Gongchuang PV Science & Technology Co., Ltd. Based on this kind of solar cells, a n-doped amorphous silicon layer deposited by plasma enhanced chemical vapor deposition technique (PECVD) was inserted between the microcrystalline silicon intrinsic layer and n-doped layer. The result showed that the introduced n-type amorphous silicon layer well improved the solar cells performance by reducing the bad effects caused by microcrystalline silicon growth defects. Compared with the solar cells without inserting the n-doped amorphous silicon layer, the open voltage and efficiency increased remarkably. When the thickness of n-doped amorphous silicon layer is 8nm, the open voltage increased from 72.9V to 73.6V and efficiency increased from 10.63% to 10.74%.

Keywords

plasma-enhanced CVD (PECVD) (deposition)microstructureamorphous
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1771: Symposium B/C/D/E – Recent Advances in Photovoltaics , 2015 , pp. 9 - 15
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Tortes, P, Meier, J, HIÜckiger, R, Kroll, U, Selvan, J.A.A, Kepper, H, Shah, A, Littlewood, S.D, Kelly, I.E, Giannoul è s, P, Appl. Phy. Lett. 69 p1373 (1996).Google Scholar
Meier, J, Duball, S, Golay, S, Kroll, U., Faÿ, S., Vallat-Sauvain, E., Feitknecht, L., Dubaill, J., Shah, A., Solar Energy Matedals and Solar Cells, 74 p457 (2002).CrossRefGoogle Scholar
Rech, B., Kluth, O., Repmann, T., Roschek, T., Springer, J., Muller, J., Finger, F., Stiebig, H., Wagner, H., Solar Energy Materials & Solar Cells, 74 p439–447 (2002).CrossRefGoogle Scholar
Nasuno, Y, Kondo, M, Matsuda, A, Soal Energy Materials & Solar Cells 74 p497–503 (2002).CrossRefGoogle Scholar
Meier, J., Dubail, S., Fluckiger, R., Fischer, D., Keppner, H., Shah, A., Proc. 1st WCPEC, Hawaii, USA, 1 p409–412 (1994).Google Scholar
Aafk e Cecile Bronneberg, Plasma Processing of Microcrystalline Silicon Films: Filling in the Gaps [D]. Eindhoven: Eindhoven University of Technology p12 (2012) .Google Scholar
Shah J. Meier, A.V., Feitknecht, L., Vallat-Sauvain, E., Bailat, J., Graf, U., Dubail, S. and Droz, C.,17th EC Photovoltaic Solar Energy Conference, vol.III p2823 (2001).Google Scholar
Zhan, Xiaodan, Zhao, Ying, Zhu, Feng, Wei, Changchun, Wu, Chunya, Gao, Yantao, Sun, Jian, Hou, Guofu, Geng, Xinhua, Xiong, Shaozhen, Journal of Syntheic Crystals, 33 (6) p960–964 (2004).Google Scholar
Zhan, Xiaodan, Zhao, Ying, Changchun Wei, Feng Zhu, Gao, Yantao, Sun, Jian, Hou, Guofu, Xue, Junming, Geng, Xinhua, Xiong, Shaozhen, Chinese Journal of Semiconductors, 26 (5) p952–956 (2005).Google Scholar
Bailat, J., Vallat-Sauvain, E., Feitknecht, L., Droz, C., Shah, A., Journal of Non-Crystalline Solids, 299–302 p390-394 (2002).Google Scholar
Python, M., Madani, O., Domine´, D., Meillaud, F., Vallat-Sauvain l, E., Ballif, C., Solar Energy Materials & Solar Cells, 93 p1714–1720 (2009).CrossRefGoogle Scholar
Martin Python Evelyne Vallat-Sauvain, Bailat, Julien, Domine, Didier, Fesquet, Luc, Shah, Arvind, Ballif, Christophe. Journal of Non-Crystalline Solids, 354 p19–25 (2008).Google Scholar
Zhan, Xiaodan, Zhao, Ying, Feng Zhu, Yantao Gao, Wei, Changchun, Sun, Jian, Wang, Yan, Geng, Xinhua, Xiong, Shaozhen, Acta Physica Sinica, 54 (4) p1899–1902 (2005)Google Scholar