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Characteristics of Memory Window and Retention Properties of One Transistor Memory Devices

Published online by Cambridge University Press:  17 March 2011

Tingkai Li ,
Sheng Teng Hsu ,
Bruce Ulrich  and
Dave Evans
Tingkai Li
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Bruce Ulrich
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Dave Evans
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
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Abstract

Pb3Ge5O11 (PGO) metal-ferroelectric-metal-oxide-semiconductor (MFMOS) and metalferroelectric-oxide-semiconductor (MFOS) one-transistor ferroelectric memory devices have been fabricated. The memory windows of the memory transistors can be characterized in terms of MFMOS or MFOS capacitor and the threshold voltages of the transistor. The retention properties of one-transistor memory devices can be measured from the changes of the capacitance of MFMOS or MFOS capacitors. Alternatively the retention properties can be evaluated from the threshold voltages or drain currents of the transistor with retention time. There are inconsistencies between the capacitor data and the transistor data. In this paper, we present the memory windows and retention properties of MFOS and MFMOS one-transistor memory devices measured with various methods. The different results obtained from various methods and device structures will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C4.3.1
Copyright
Copyright © Materials Research Society 2002

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