This communication describes a technique used to pattern oxide thin layers using microcontact printing (μCP) and sol-gel deposition. The technique involves μCP of self-assembled monolayers (SAM's) of alkylsiloxane on various substrates (SiO2/Si, sapphire, ITO, and glass), followed by deposition of oxide thin layers from sol-gel precursors. Delamination of oxide layers from SAM-derivatized regions allows selective deposition of crystalline dielectric oxide layers on underivatized regions. To demonstrate the viability of this technique for integrated microelectronics and optics applications, patterned (Pb,La)TiO3 (PLT) and LiNbO3 layers were deposited on sapphire, silicon, and indium tin oxide (ITO) substrates. Use of lattice-matched substrates allows lithography-free deposition of patterned heteroepitaxial oxide layers. Strip waveguides of heteroepitaxial LiNbO3 with 4 μm lateral dimensions were fabricated on sapphire. Dielectric measurements for patterned PLT thin layers on ITO are also reported.