Be, S, Si, and Ne implantations were performed at room temperature into InSb layers grown on undoped semi-insulating GaAs substrates. The implant damage in InSb is of ntype behavior. The implanted material was subjected to both isochronal and isothermal annealing schemes using a molybdenum strip heater. A maximum p-type activation of 90 % and si-type activation of 16 % was achieved for Be and S implants, respectively. Si implant has an amphoteric doping behavior.