Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  1. Home
  2. Search

Refine search

Refine search

Access:
Content type:
Publication date:
Apply
Subject: Show more
Journals Show more
Publishers: Show more
Societies Show more
Series: Show more
Collections: Show more

Actions for selected content:

Select all | Deselect all
  • View selected items
  • Export citations
  • Download PDF (zip)
  • Save to Kindle
  • Save to Dropbox
  • Save to Google Drive

Save Search

You can save your searches here and later view and run them again in "My saved searches".

Please provide a title, maximum of 40 characters.
Cancel
×

4 results

  • SIS-HOLZ Strain Measurements Through the Thickness of a SI Crystal
  • Mana Norouzpour, Rodney Herring
  • Journal: Microscopy and Microanalysis / Volume 24 / Issue S1 / August 2018
  • Published online by Cambridge University Press: 01 August 2018, pp. 40-41
  • Print publication: August 2018
    • Article
      • You have access
    • PDF
    • Export citation
  • Aberration-corrected self-interference of split higher order Laue zone line for measuring the z-dependent strain profile
  • Mana Norouzpour, Rodney Herring
  • Journal: Journal of Materials Research / Volume 32 / Issue 5 / 14 March 2017
  • Published online by Cambridge University Press: 16 January 2017, pp. 996-1008
  • Print publication: 14 March 2017
  • View abstract

    A common characteristic in semiconductor nanostructures is the lattice strain originating from the lattice mismatch between layers of different compositions. Three-dimensional strain measurement in crystals using transmission electron microscopy (TEM) techniques has been the subject of intense works for decades. This information is required for the strain-bandgap engineering being used by our current fast computers and necessary for future quantum computers. However, the missing information was the 3rd dimension that is the atomic displacement and how it changes along the electron-beam direction. The strain information along the electron-beam direction is in the phase of the diffracted beam, which has been obtained recently by the novel technique of self-interference of split higher order Laue zone line (SIS-HOLZ). SIS-HOLZ has been made possible by the correction of the beam aberrations having its analytical and experimental details reported here for the atomic displacement profile existing at the interface of a Si and Si/Si0.8Ge0.2 superlattice.

  • Strain Measurement through the Thickness of Crystal using DBI
  • Mana Norouzpour, Rodney Herring
  • Journal: Microscopy and Microanalysis / Volume 21 / Issue S3 / August 2015
  • Published online by Cambridge University Press: 23 September 2015, pp. 1965-1966
  • Print publication: August 2015
    • Article
      • You have access
    • PDF
    • Export citation