11 results
Lattice constant variation in GaN:Si layers grown by HVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.41
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- 2002
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Comparative study of HVPE- and MOCVD-grown nitride structures for UV lasing application
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G6.4
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- 2000
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Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 661-667
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- 2000
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Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 977-983
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- 2000
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Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 796-802
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- 2000
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Carrier Recombination Dynamics of AlxGa1−xN Epilayers Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 457
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- 1999
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Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W12.7
- Print publication:
- 1999
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown: InGaN Epilayers and InGaN/GaN Quantum Wells
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 81-86
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- 1999
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Microstructure-Based Lasing in GaN/AlGaN Separate Confinement Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.22
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- 1999
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Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.57
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- 1999
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Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G2.4
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- 1998
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