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A four week longitudinal study was conducted to assess the relationship between insight, psychopathology and treatment compliance in schizophrenia using Insight and Treatment Attitude Questionnaire (ITAQ), Positive and Negative Syndrome Scale (PANSS) and Medication Adherence Rating Scale (MARS). Study sample consisted of 50 patients with schizophrenia diagnosed as per diagnostic criteria of research of WHO with a mean period of illness being 5.32 years. There was substantial psychopathology at intake which improved significantly after 4 weeks. Similar changes were found with the scores of insight and compliance over 4 weeks. Insight and compliance were positively correlated to each other at intake and at the end of 4 weeks. Both of these were negatively correlated with psychopathology scores on both the occasions. Stepwise logistic regression was applied with compliance as dependent variable and psychopathology and insight as independent variables on both the visits and it was found that most powerful predictor of compliance on first visit is insight on first visit [ R = .636] and most powerful predictor of compliance on second visit is compliance on first visit [ R = .838].
Conventional direct write processes are multi-step requiring at least one additional process to change conductive properties. A direct conversion technique that uses lasers to irradiate silicon carbide, providing tracks which are highly conductive has been demonstrated. It was found that laser irradiation of insulating silicon carbide films could cause a drop from 1011 to 10−4 ohm-cm in a 4-point resistance test. However, in the presence of pure oxygen, laser-irradiated silicon carbide conductor and semiconductor samples exhibit insulating characteristics. Pattern formation was achieved by a computer program controlled galvo-mirror. The pads, 0.4 cm × 0.7 cm were formed by beam rastering with an overlap of 30% of the 0.025 cm beam diameter. This computer assisted processing allows the design of patterns using conventional CAD/CAE technologies and smart material behavior via selective and controlled electrical property transitions by laser irradiation
Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.
A shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.
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