In a prevalence study of 209 healthcare workers, 18 (8.6%) and 13 (6.2%) carried methicillin-resistant Staphylococcus aureus in their nares or on their hands, respectively. However, 100 (62%) of 162 workers completing an associated survey believed themselves to be colonized, revealing a knowledge deficit about methicillin-resistant Staphylococcus aureus epidemiology.

Infect. Control Hosp. Epidemiol. 2015;37(1):110–112

Recurrent skin and soft-tissue infections (SSTIs) due to Staphylococcus aureus are a common problem in children and adults. Many of these SSTIs are caused by a community-associated methicillin-resistant S. aureus (MRSA) strain designated USA300. Dilute bleach baths are commonly used as part of decolonization regimens for recurrent SSTI, particularly in children. However, limited data are available on the microbiological efficacy of dilute bleach on skin, and optimal concentrations are unknown. Recent practice guidelines for MRSA from the Infectious Diseases Society of America recommend a teaspoon of household bleach per gallon of bath water (1.3 μL/mL or a quarter cup per quarter tub of water) for 15 minutes twice weekly. On the basis of in vitro data, Fisher et al suggested that a higher concentration (2.5 μL/mL or a half cup per quarter tub of water) might be more effective (more than a 3-log reduction in MRSA in 5 minutes versus a 2-log reduction for a 1.2-μL/mL concentration). In contrast, more dilute bleach solutions (eg, a quarter cup of 6% sodium hypochlorite per bathtub full of water) for 5 days in combination with intranasal mupirocin were effective for eradication of colonization in a recent randomized trial, but 29% of patients in the mupirocin/bleach bath group developed recurrent colonization within 4 months. Here, we used a pig skin model to examine the effectiveness of various concentrations of dilute bleach solution and an electrochemically activated saline solution containing 0.025% hypochlorous acid (Vashe; PuriCore) for disinfection of MRSA on skin. Vashe is safe for use on skin and is commercially available as a wound care product.

Background: Mibampator, an amino-3-hydroxy-5-methyl-4-isoxazole propionic acid receptor potentiator, was evaluated for treatment of agitation and aggression (A/A) in Alzheimer's disease (AD).

Methods: Outpatients (n = 132) with probable AD and A/A randomized to 12 weeks of double-blind treatment with 3-mg po mibampator or placebo were assessed using the 4-domain A/A subscale of the Neuropsychiatric Inventory (NPI-4-A/A) derived from the Neuropsychiatric Inventory. Secondary measures included the Cohen-Mansfield Agitation Inventory, Cornell Scale for Depression in Dementia, Frontal Systems Behavior Inventory (FrSBe), and Alzheimer's Disease Assessment Scale-Cognitive. Efficacy was analyzed using mixed-effects model repeated measures from baseline to endpoint. Adverse events (AEs), labs, vital signs, and electrocardiograms were monitored.

Results: Baseline characteristics were comparable between groups. Both groups improved on the NPI-4-A/A, but without group differences. Among secondaries, mibampator was significantly better (p = 0.007) than placebo only on the FrSBe. AEs were similar between groups. One death occurred in the placebo group.

Conclusion: Possible explanations for no significant group differences include caregiver, drug target engagement, and design issues.

This trial is registered on ClinicalTrials.gov; ID: NCT00843518.

In a Veterans Affairs medical center, 39% of healthcare facility–onset, healthcare facility-associated Clostridium difficile infections had their onset in the affiliated long-term care facility (LTCF). Eighty-five percent of LTCF-onset patients had been transferred from the hospital within the past month. Delays in diagnosis and treatment were common for LTCF-onset patients.

We demonstrate that SiO2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900°C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 – 5.3 μm and 7.5 – 14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and latticematched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3 – 5.3mu;m and 7.5 – 14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is ∼0.065A/W at 4.9μm and ∼0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3 – 5.3μm and 7.5 – 14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Enhanccd adhesion of Copper to spin-coated polytetrafluoroethylene PTFE.) film is achieved by employing an intermediate adhesive layer consisting of fluorinated ethylenepropylene (FEP) and metallic titanium. The peel strength of Cu on PTFE is low (1–2 g/mm) without the adhesive layer. After incorporating the Ti/FEP adhesive layer, a peel strength as high as 80 g/mm can be achieved. The overall peel strength is found to increase with the adhesive layer thickness. Thermal annealing at high temperatures strongly affects its overall peel strength. Previous XPS study indicated the formation of TiCx at the Ti/FEP and Ti/PTFE interfaces. Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy studies revealed that significant amount of Cu diffused into the FEP layer through the Ti layer when the specimens were heat treated at 375°C for various amount of time. Cu diffusion strongly affects the interfacial properties and hence results in the variation of overall peel strength. The results indicate that the thickness of Ti barrier as well as the heat treatment temperature are important for retaining the high peel strength.