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Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

Published online by Cambridge University Press:  10 February 2011

D. K. Sengupta ,
S. Kim ,
T. Horton ,
H. C. Kuo ,
S. Thomas ,
S. L. Jackson ,
A. P. Curtis ,
S. G. Bishop ,
M. Feng  and
G. E. Stillman
...Show all authors
D. K. Sengupta
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Kim
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
T. Horton
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. C. Kuo
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Thomas
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. L. Jackson
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
A. P. Curtis
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. G. Bishop
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
M. Feng
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, ECE Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Y. C. Chang
Affiliation:
Materials Research Laboratory, Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801
H. C. Liu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario Kl A0R6, Canada
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Abstract

P-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 225
Copyright
Copyright © Materials Research Society 1997

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References

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