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Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes
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- Journal:
- Microscopy and Microanalysis / Volume 28 / Issue S1 / August 2022
- Published online by Cambridge University Press:
- 22 July 2022, pp. 2010-2011
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- August 2022
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Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates
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- Microscopy and Microanalysis / Volume 27 / Issue S1 / August 2021
- Published online by Cambridge University Press:
- 30 July 2021, pp. 916-917
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- August 2021
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Identification of Star Defects in Gallium Nitride with HREBSD and ECCI
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- Microscopy and Microanalysis / Volume 27 / Issue 2 / April 2021
- Published online by Cambridge University Press:
- 16 April 2021, pp. 257-265
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- April 2021
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Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC
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- Microscopy and Microanalysis / Volume 24 / Issue S1 / August 2018
- Published online by Cambridge University Press:
- 01 August 2018, pp. 1842-1843
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- August 2018
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Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E10.9
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- 2004
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Advances in AlGaN-based Deep UV LEDs
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E10.1
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- 2004
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Junction Temperature Measurements in Deep-UV Light-Emitting Diodes
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E1.7
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- 2004
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Characterization and analysis of heteroepitaxial growth on silicon structures
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- Microscopy and Microanalysis / Volume 9 / Issue S02 / August 2003
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- 19 July 2003, pp. 372-373
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- August 2003
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Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers
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- MRS Bulletin / Volume 27 / Issue 7 / July 2002
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- 31 January 2011, pp. 520-524
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- July 2002
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Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN
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- MRS Online Proceedings Library Archive / Volume 719 / 2002
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- 01 February 2011, F13.3
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- 2002
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Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L10.4
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- 2002
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Characterization of Dark-Block Defects in Cantilever Epitaxial GaN on Sapphire
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L3.15
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- 2002
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Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L1.8
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- 2002
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Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples
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- MRS Online Proceedings Library Archive / Volume 692 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, H6.11.1
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- 2001
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Time-Resolved Photoluminescence Studies of InxGa1−xAs1−yNy
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- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 153
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- 1999
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Deep Level Defect Studies in Mocvd-Grown InxGa1−sAs1−yNy Films Lattice-Matched to GaAs
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- MRS Online Proceedings Library Archive / Volume 535 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 59
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- 1998
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Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 484 / 1997
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- 10 February 2011, 19
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- 1997
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Novel Mid-Infrared Lasers with Compressively Strained InAsSb Active Regions
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
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- 10 February 2011, 23
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- 1996
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The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 421 / 1996
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- 10 February 2011, 33
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- 1996
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Preparation of AlAsSb and Mid-Infrared (3–5μm) Lasers By Metal-Organic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 43
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- 1996
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