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Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

Published online by Cambridge University Press:  11 February 2011

D. M. Follstaedt ,
P. P. Provencio ,
D. D. Koleske ,
C. C. Mitchell ,
A. A. Allerman ,
N. A. Missert  and
C. I. H. Ashby
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
P. P. Provencio
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
D. D. Koleske
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
C. C. Mitchell
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
A. A. Allerman
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
N. A. Missert
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
C. I. H. Ashby
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
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Abstract

The density of vertical threading dislocations at the surface of GaN grown on sapphire by cantilever epitaxy has been reduced with two new approaches. First, narrow mesas (<1 μm wide) were used and {11–22} facets formed over them early in growth to redirect dislocations from vertical to horizontal. Cross-sectional transmission electron microscopy was used to demonstrate this redirection and to identify optimum growth and processing conditions. Second, a GaN nuc-leation layer with delayed 3D → 2D growth transition and inherently lower threading dislocation density was adapted to cantilever epitaxy. Several techniques show that a dislocation density of only 2–3×107/cm2 was achieved by combining these two approaches. We also suggest other developments of cantilever epitaxy for reducing dislocations in heteroepitaxial systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L1.8
Copyright
Copyright © Materials Research Society 2003

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References

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