6 results
Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1562 / 2013
- Published online by Cambridge University Press:
- 06 June 2013, mrss13-1562-dd14-11
- Print publication:
- 2013
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Reinvestigation of crystal structure and structural disorder of Ba3MgSi2O8
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- Journal:
- Powder Diffraction / Volume 24 / Issue 3 / September 2009
- Published online by Cambridge University Press:
- 29 February 2012, pp. 180-184
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Identification of the Location of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells and Investigation on Their Properties
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e06-07
- Print publication:
- 2012
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Time-Dependent Forming Characteristics in Pt/NiO/Pt Stack Structures for Resistive Random Access Memory
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e06-02
- Print publication:
- 2012
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Water Column Profiles of Dissolved Inorganic Radiocarbon for the Kuroshio Region, Offshore of the Southern Japanese Coast
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- Journal:
- Radiocarbon / Volume 53 / Issue 4 / 2011
- Published online by Cambridge University Press:
- 18 July 2016, pp. 679-690
- Print publication:
- 2011
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- Article
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Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G05-05
- Print publication:
- 2010
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