56 results
Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 845-851
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- 2000
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Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.3.1
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- 2000
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A Review of Dry Etching of GaN and Related Materials
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e11
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- 2000
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Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.5.1
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- 2000
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 376-383
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- 2000
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Design and Performance of Nitride-based UV LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.6.1
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- 2000
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Behavior of W and WSix Contact Metallization on n- and p- Type GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 684-690
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- 1999
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High-Density Plasma-Induced Etch Damage of GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 271
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- 1999
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Rapid Thermal Processing of Implanted GaN up to 1500°C
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 671-677
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- 1999
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Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 823-833
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- 1999
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Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems
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- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 281
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- 1999
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Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 811-816
- Print publication:
- 1999
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Fabrication and Characterization of GaN Junctionfield Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W4.9
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- 1999
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Activation Characteristics of Donor and Acceptor Implants in GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 513
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- 1999
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Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.68
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- 1999
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Ultra-High Implant Activation Efficiency In GaN Using Novel High Temperature RTP System
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 463
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- 1998
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GaN Etching in BCl3/Cl2 Plasmas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 487
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- 1998
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Monitoring and Controlling of Strain During Mocvd of AlGaN for UV Optoelectronics
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.7
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- 1998
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Rapid Thermal Processing of Implanted GaN Up to 1500°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.33
- Print publication:
- 1998
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Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 501
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- 1998
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