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Design and Performance of Nitride-based UV LEDs

Published online by Cambridge University Press:  15 March 2011

M. H. Crawford ,
J. Han ,
R. J. Shul ,
M. A. Banas ,
J. J. Figiel  and
L. Zhang
M. H. Crawford
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. A. Banas
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. J. Figiel
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
L. Zhang
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We overview several of the challenges in achieving high efficiency nitride-based UV (< 400 nm) LEDs. The issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys ( InGaN, AlInGaN). We compare the performance of two distinct UV LED structures. GaN/AlGaN quantum well LEDs with λ < 360 nm emission have demonstrated output powers > 0.1 mW, but present designs suffer from internal absorption effects. InGaN/AlInGaN quantum well LEDs with 370 nm< λ < 390 nm emission and > 1 mW output power are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T3.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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