4 results
A Novel Two-Pass Excimer Laser Crystallization Process to Obtain Homogeneous Large Grain Polysilicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 558 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 175
- Print publication:
- 1999
-
- Article
- Export citation
A New Method for the Derivation of the Output Characteristics of Amorphous Silicon Thin-Film Transistors.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 805
- Print publication:
- 1994
-
- Article
- Export citation
Determination of the Defect Redistribution and Charge Injection Contributions to the a-Si:H Thin-Film Transistor Instability
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 336 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 829
- Print publication:
- 1994
-
- Article
- Export citation
High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 283 / 1992
- Published online by Cambridge University Press:
- 28 February 2011, 715
- Print publication:
- 1992
-
- Article
- Export citation