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A Novel Two-Pass Excimer Laser Crystallization Process to Obtain Homogeneous Large Grain Polysilicon

Published online by Cambridge University Press:  10 February 2011

L. Mariucci
Affiliation:
CNR-IESS, VIA Cineto Romano 42, 00156 Roma (ITALY), luigi@iess.rm.cnr.it
R. Carluccio
Affiliation:
CNR-IESS, VIA Cineto Romano 42, 00156 Roma (ITALY), luigi@iess.rm.cnr.it
A. Pecora
Affiliation:
CNR-IESS, VIA Cineto Romano 42, 00156 Roma (ITALY), luigi@iess.rm.cnr.it
V. Foglietti
Affiliation:
CNR-IESS, VIA Cineto Romano 42, 00156 Roma (ITALY), luigi@iess.rm.cnr.it
G. Fortunato
Affiliation:
CNR-IESS, VIA Cineto Romano 42, 00156 Roma (ITALY), luigi@iess.rm.cnr.it
D.Della Sala
Affiliation:
ENEA CR- Casaccia, via Anguillarese 301, 00060 S.Maria di Galeria (ITALY)
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Abstract

New approach to control the lateral growth mechanism through the opportune spatial modulation of the absorbed laser energy and with a two-pass excimer laser crystallization process is presented. In the first pass, spatial modulation of the light intensity has been obtained by irradiating the sample through a patterned mask in contact with the sample. Lateral growth is triggered when the irradiated regions are fully melted and a lateral extension of the grains in excess to 1 μm has been observed for samples irradiated at RT. In order to homogeneously crystallize the sample, the film can be re-irradiated (second pass) without the mask. By using opportune energy densities it can be induced a complete melting of the residual a-Si regions (masked areas during the first pass), while partially melting the polysilicon regions (unmasked areas during the first pass). Different mask geometries have been investigated and for optimized conditions, the sample area can be fully covered with laterally grown grains. The proposed novel technique can be rather attractive for polysilicon TFT fabrication, being characterized by only a two laser-shot process and wide energy density windows.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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