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A New Method for the Derivation of the Output Characteristics of Amorphous Silicon Thin-Film Transistors.

Published online by Cambridge University Press:  16 February 2011

A. Mittiga ,
L. Mariucci ,
R. Carluccio ,
A. Pecorai  and
G. Fortunato
A. Mittiga
Affiliation:
ENEA-CRIF, C.P. 32, 80055 Portici (NA), Italy
L. Mariucci
Affiliation:
ENEA-CRIF, C.P. 32, 80055 Portici (NA), Italy
R. Carluccio
Affiliation:
IESS-CNR, via Cineto Romano 42, 00156 Roma, Italy
A. Pecorai
Affiliation:
IESS-CNR, via Cineto Romano 42, 00156 Roma, Italy
G. Fortunato
Affiliation:
IESS-CNR, via Cineto Romano 42, 00156 Roma, Italy
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Abstract

A novel method to derive the output characteristics of a-Si:H thin film transistors from the channel conductance curve is presented. The Method well reproduces the experimental data both in the linear and saturation regimes without using any adjustable parameter. The Method is simple and fast enough to be used in a circuit simulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 805
Copyright
Copyright © Materials Research Society 1994

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References

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