7 results
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 10 / Issue 1 / February 2018
- Published online by Cambridge University Press:
- 27 November 2017, pp. 39-46
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Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
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- International Journal of Microwave and Wireless Technologies / Volume 7 / Issue 3-4 / June 2015
- Published online by Cambridge University Press:
- 05 February 2015, pp. 287-296
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InAlN/GaN HEMTs based L-band high-power packaged amplifiers
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- International Journal of Microwave and Wireless Technologies / Volume 6 / Issue 6 / December 2014
- Published online by Cambridge University Press:
- 25 February 2014, pp. 565-572
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Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
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- International Journal of Microwave and Wireless Technologies / Volume 3 / Issue 3 / June 2011
- Published online by Cambridge University Press:
- 21 April 2011, pp. 301-309
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A new nonlinear HEMT model for AlGaN/GaN switch applications
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- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 3-4 / August 2010
- Published online by Cambridge University Press:
- 07 July 2010, pp. 283-291
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Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
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- Journal:
- International Journal of Microwave and Wireless Technologies / Volume 2 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 23 March 2010, pp. 105-114
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Le contrôle républicain du marché: Vignerons et négociants sous la Troisième République
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- Journal:
- Annales. Histoire, Sciences Sociales / Volume 61 / Issue 5 / October 2006
- Published online by Cambridge University Press:
- 04 May 2017, pp. 1147-1170
- Print publication:
- October 2006
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