Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-14T20:54:52.151Z Has data issue: false hasContentIssue false
  • English
  • Français

Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

Published online by Cambridge University Press:  23 March 2010

Stéphane Piotrowicz ,
Erwan Morvan ,
Raphaël Aubry ,
Guillaume Callet ,
Eric Chartier ,
Christian Dua ,
Jérémy Dufraisse ,
Didier Floriot ,
Jean-Claude Jacquet  and
Olivier Jardel
...Show all authors
Stéphane Piotrowicz*
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Erwan Morvan
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Raphaël Aubry
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Guillaume Callet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Eric Chartier
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Christian Dua
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Jérémy Dufraisse
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Didier Floriot
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Jean-Claude Jacquet
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Olivier Jardel
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Yves Mancuso
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Benoit Mallet-Guy
Affiliation:
THALES Systèmes Aéroportés, Avenue Gay-Lussac, Elancourt, France.
Mourad Oualli
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Zineb Ouarch
Affiliation:
United Monolithic Semiconductors, Rd 128, 91401 Orsay, France.
Marie-Antoinette Di-Forte Poisson
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Nicolas Sarazin
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
Michel Stanislawiak
Affiliation:
THALES Air Systems, ZI du Mont Jarret, 76520 Ymare, France.
Sylvain Delage
Affiliation:
ALCATEL-THALES III-V Lab, Route de Nozay, 91461 Marcoussis, France.
*
Corresponding author: S. Piotrowicz Email: stephane.piotrowicz@3-5lab.fr
Get access Rights & Permissions [Opens in a new window]

Abstract

The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.

Keywords

GaNHEMTMMICPower amplifierLow noiseSwitch
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 105 - 114
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Wu, Y.-F.; Kapolnek, D.; Ibbrtson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K.: Very-high power density AlGaN/GaN HEMTs. IEEE Trans. Electron. Dev., 48 (3) (2001), 586–590.Google Scholar
[2]Sheppard, S.T. et al. : High power microwave GaN/AlGaN HEMT's on SiC substrate. IEEE Electron. Dev. Lett., 20 (1999), 161–163.CrossRefGoogle Scholar
[3]Piotrowicz, S. et al. : Ultra compact X-band GaInP/GaAs HBT MMIC amplifiers: 11 W, 42% of PAE on 13 mm2 and 8.7 W, 38% of PAE on 9 mm2, in IEEE MTT-S Digest, June 2006.CrossRefGoogle Scholar
[4]Couturier, A.M. et al. : A robust 11 W high efficiency X-band GaInP HBT amplifier, in IEEE MTT-S Digest, June 2007.CrossRefGoogle Scholar
[5]Kobayashi, K.W.; Chen, Y.C.; Smorchkova, I.; Tsai, R.; Wojtowicz, M.; Oki, A.: A 2 watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi octave bandwidth from 0.2–8 GHz, in IEEE IMS 2007 Conf., 619–622.CrossRefGoogle Scholar
[6]Lee, Y.; Jeong, Y.: Applications of GaN HEMT's and SiC MESFETs in high efficiency class-E power amplifier design for WCDMA applications, in IEEE IMS 2007 Conf., 1099–1102.CrossRefGoogle Scholar
[7]Lee, J.; Webb, K.J.: Broadband GaN HEMT push-pull microwave power amplifier. IEEE Microwave Wireless Components Lett., 11 (9) (2001), 367–369.Google Scholar
[8]Mancuso, Y.; Gremillet, P.; Lacomme, P.: T/R-Modules technological and technical trends for phased array antennas, in IEEE IMS 2006 Conf., 614–617.CrossRefGoogle Scholar
[9]Sudow, M. et al. : An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design. IEEE Trans. Microwave Theory Tech., 56 (8) (2008).5 1827–1833.CrossRefGoogle Scholar
[10]Piotrowicz, S. et al. : Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band, in EuMW 2009 Conf., 1784–1787.CrossRefGoogle Scholar
[11]Jardel, O. et al. : A new nonlinear HEMT model for AlGaN/GaN switch applications, in EuMW 2009 Conf., Rome, Italy, 74–77.Google Scholar
[12]Jansen, J.; van Heijningen, M.; Provenzano, G.; Visser, G.C.; Morvan, E.; van Vliet, F.E.: X-band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling, in CSIC 2008 Conf., Monterey, USA.CrossRefGoogle Scholar
[13]Piotrowicz, S. et al. : State of the Art 58 W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in CSIC 2008 Conf., Monterey, USA.CrossRefGoogle Scholar
[14]Schuh, P. et al. : 20 W GaN HPAs for next generation X-Band T/R-modules, in IMS 2006 Conf., San Francisco, USA.CrossRefGoogle Scholar
[15]Costrini, C. et al. : A 20 Watt microstrip X Band AlGaN/GaN HPA MMIC for advanced radar applications, in EuMW Conf., Amsterdam, 2008.CrossRefGoogle Scholar
[16]Kühn, J. et al. : Design of X-Band GaN MMICs using field plates, in EuMW Conf., Roma, 2009.Google Scholar
[17]Fanning, D.M. et al. : 25 W X-band GaN on Si MMIC, in GaAs MANTECH 2005 Conf. Proc., New Orleans, USA, April 2005.Google Scholar
[18]Klockenhoff, H.; Behtash, R.; Wurfl, J.; Heinrich, W.; Tranckle, G.: A compact 16 Watt X-band GaN-MMIC power amplifier, in IEEE MTT-S Digest, 2006, 1846–1849.CrossRefGoogle Scholar
[19]Tayrani, R.: A spectrally pure 5.0 W, high PAE, (6–12 GHz) GaN monolithic class E power amplifier for advanced T/R modules, in RFIC Conf. 2007, 581–584.CrossRefGoogle Scholar
[20]Piotrowicz, S. et al. : Broadband hybrid flip-chip 6–18 GHz AlGaN/GaN HEMT amplifiers, in IEEE IMS 2008 Conf., 1131–1134.CrossRefGoogle Scholar