7 results
Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 379 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 441
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- 1995
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Growth and Photoluminescence of Strained < 110 > Si/SilxGex/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 342 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 37
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- 1994
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Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 220 / 1991
- Published online by Cambridge University Press:
- 22 February 2011, 341
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- 1991
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Rapid Thermal Annealing of GaAs/AlGaAs Coupled Double Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 157
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- 1988
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Excitation Spectroscopy of the Defect Bound Excitons in MBE GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 104 / 1987
- Published online by Cambridge University Press:
- 26 February 2011, 549
- Print publication:
- 1987
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Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 90 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 263
- Print publication:
- 1986
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Temperature Dependent and Time Resolved Optical Studies of Single Quantum Wells Produced by Interrupted Growth MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 77 / 1986
- Published online by Cambridge University Press:
- 26 February 2011, 461
- Print publication:
- 1986
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