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Well-Resolved Band-Edge Photoluminescence from Strained Si1–xGex Layers Grown by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

J. C. Sturm ,
P. V. Schwartz ,
H. Manoharan ,
Q. Mi ,
L. C. Lenchyshyn ,
M. L. W. Thewalt ,
N. L. Rowell ,
J. -P. Noël  and
D. C. Houghton
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
P. V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
H. Manoharan
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
Q. Mi
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
L. C. Lenchyshyn
Affiliation:
Department of Physics, Simon Fraser University Burnaby, BC, V5A 1S6, Canada
M. L. W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University Burnaby, BC, V5A 1S6, Canada
N. L. Rowell
Affiliation:
National Research Council, Ottawa, K1A OR6, Canada
J. -P. Noël
Affiliation:
National Research Council, Ottawa, K1A OR6, Canada
D. C. Houghton
Affiliation:
National Research Council, Ottawa, K1A OR6, Canada
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Abstract

Well resolved band-edge luminescence of excitons in silicon-germanium alloy strained layers, quantum wells, and superlattices has been observed in films grown by Rapid Thermal Chemical Vapor Deposition. The signal is due to bound excitons at low temperatures and free excitons at higher temperatures, and has a strong no-phonon signal which is caused by alloy scattering. Bandgaps inferred from photoluminescence agree well with those measured by absorption spectroscopy, inferring that a no-phonon process dominates the band-edge absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 341
Copyright
Copyright © Materials Research Society 1991

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References

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