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Temperature Dependent and Time Resolved Optical Studies of Single Quantum Wells Produced by Interrupted Growth MBE

Published online by Cambridge University Press:  26 February 2011

B. S. Elman ,
Emil S. Koteles ,
C. Jagannath ,
Y. J. Chen ,
S. Charbonneau  and
M. L. W. Thewalt
B. S. Elman
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254, USA
Emil S. Koteles
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254, USA
C. Jagannath
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254, USA
Y. J. Chen
Affiliation:
GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, MA 02254, USA
S. Charbonneau
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C. V5A 1S6, Canada
M. L. W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C. V5A 1S6, Canada
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Abstract

Multiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this idea.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 461
Copyright
Copyright © Materials Research Society 1987

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References

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