11 results
Process Induced Extended Defects in SiC Grown via Sublimation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K3.5
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- 2002
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Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 197
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- 1994
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Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy
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- Journal:
- Journal of Materials Research / Volume 8 / Issue 8 / August 1993
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1908-1921
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- August 1993
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High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 283 / 1992
- Published online by Cambridge University Press:
- 28 February 2011, 715
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- 1992
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TiSi2 Integrity within a Doped Silicide Process Step
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- Journal:
- MRS Online Proceedings Library Archive / Volume 279 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 307
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- 1992
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Feasibility of Simox Material Quality Determination Using Spectroellipsometry: Comparison With Raman And Planar View Transmission Electron Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 235 / 1991
- Published online by Cambridge University Press:
- 28 February 2011, 139
- Print publication:
- 1991
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Electrical Activation of Heavily Doped Arsenic Implanted Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 128 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 599
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- 1988
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High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 100 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 17
- Print publication:
- 1988
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High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 107 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 17
- Print publication:
- 1987
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Synthesis of Buried Layers of β Sic in Single Crystal Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 107 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 473
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- 1987
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Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 107 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 87
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- 1987
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