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Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

Published online by Cambridge University Press:  21 February 2011

V. Heera ,
R. Kögler ,
W. Skorupa  and
J. Stoemenos
V. Heera
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
R. Kögler
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
J. Stoemenos
Affiliation:
Aristotle University of Thessaloniki, Physics Dep., 54006 Thessaloniki, Greece
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Abstract

The evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 197
Copyright
Copyright © Materials Research Society 1994

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References

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